Epitaxial growth of Bi2Se3 in the (0015) orientation on GaAs (001)
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چکیده
منابع مشابه
Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology
We describe the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of Cu (00 1) at room temperature on hydrogen-terminated Si (00 1) . In situ reflection high energy electron diffraction indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5-20 nm of Cu film growth. Post-growth x-ray diffraction indicates ...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A
سال: 2020
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.5139905